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Memristive Properties of GaN HEMTs Containing Deep‐Level Traps
Gomes, João L., Nunes, Luís C., Sobolev, Nikolai A., Pedro, José C.Language:
english
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201800387
Date:
December, 2018
File:
PDF, 949 KB
english, 2018