Can we optimize the gate oxide quality of DRAM input/output...

Semiconductor Science and Technology 2019 / 01 Vol. 34; Iss. 1

Can we optimize the gate oxide quality of DRAM input/output pMOSFETs by a post-deposition treatment?

Simoen, E, O’Sullivan, B, Ritzenthaler, R, Dentoni-Litta, E, Schram, T, Horiguchi, N, Claeys, C
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Volume:
34
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aaf4dc
Date:
January, 2019
File:
PDF, 1.24 MB
english, 2019
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