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Comparative Study of 1.3 and 1.5 m Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots
Niasse, O.A., Ba, B., Ndiaye, A., Mbaye, F., Lo, A., Beye, A., Tottereau, O.Volume:
5
Language:
english
Journal:
Research Journal of Applied Sciences, Engineering and Technology
DOI:
10.19026/rjaset.5.5080
Date:
January, 2013
File:
PDF, 1.20 MB
english, 2013