Effect of short circuit aging on safe operating area of SiC MOSFET
Nguyen, Tien Anh, Lefebvre, Stéphane, Azzopardi, StéphaneVolume:
88-90
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.06.040
Date:
September, 2018
File:
PDF, 1.63 MB
english, 2018