Ni/GeOx/p+ Si resistive-switching random-access memory with...

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Vacuum 2018 / 12

Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling

Lee, Jae Yoon, Kim, Youngmin, Kim, Min-Hwi, Go, Seoyeon, Ryu, Seung Wook, Lee, Jae Yeon, Ha, Tae Jung, Kim, Soo Gil, Cho, Seongjae, Park, Byung-Gook
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Language:
english
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2018.12.020
Date:
December, 2018
File:
PDF, 1.10 MB
english, 2018
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