A Numerical Simulation of C₃N Nanoribbon-Based Field-Effect...

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IEEE Transactions on Electron Devices 2018

A Numerical Simulation of C₃N Nanoribbon-Based Field-Effect Transistors

Zhang, Tiancheng, Zeng, Hui, Ding, Dazhi, Chen, R. S.
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2883298
File:
PDF, 1.64 MB
english, 2018
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