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Impact of Trap States on Inductive Phenomena in 30 % InGaN/GaN MQW LED Devices
Bozkurt, Kutsal, Ozdemir, Orhan, Ayarcı Kuruoğlu, Neslihan, Bandar, Alshehri, Dogheche, Karim, Gaimard, Quentin., Ramdane, Abderrahim, Dogheche, ElhadjLanguage:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aaf941
Date:
December, 2018
File:
PDF, 1.40 MB
english, 2018