Extremely long lifetime of III-nitride laser diodes grown...

Materials Science in Semiconductor Processing 2019 / 03 Vol. 91

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

Muziol, G., Siekacz, M., Nowakowski-Szkudlarek, K., Hajdel, M., Smalc-Koziorowska, J., Feduniewicz-Żmuda, A., Grzanka, E., Wolny, P., Turski, H., Wiśniewski, P., Perlin, P., Skierbiszewski, C.
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Volume:
91
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2018.12.011
Date:
March, 2019
File:
PDF, 1.55 MB
english, 2019
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