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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Carrier Transport in a Two-Dimensional Topological Insulator Nanoribbon in the Presence of Vacancy Defects.
Tiwari, Sabyasachi, Van de Put, Maarten L., Soree, Bart, Vandenberghe, William G.Year:
2018
Language:
english
DOI:
10.1109/SISPAD.2018.8551720
File:
PDF, 363 KB
english, 2018