Resistive switching behaviors mediated by grain boundaries...

Materials Science in Semiconductor Processing 2019 / 03 Vol. 91

Resistive switching behaviors mediated by grain boundaries in one longitudinal Al/MoS2&PVP/ITO device

Bai, Na, Xu, Min, Hu, Cong, Ma, Yaodong, Wang, Qi, He, Deyan, Qi, Jing, Li, Yingtao
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Volume:
91
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2018.11.024
Date:
March, 2019
File:
PDF, 1.54 MB
english, 2019
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