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Time-Resolved Photocurrent Spectroscopic Diagnostics of Electrically Active Defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) Structure Grown on Si Wafers
Ozden, Burcu, Khanal, Min P, Mirkhani, Vahid, Yapabandara, Kosala, Yang, Chungman, Ko, Sangjong, Youn, Suhyeon, Hamilton, Michael C, Sk, Mobbassar Hassan, Ahyi, Ayayi Claude, Park, MinseoVolume:
16
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2016.12590
Date:
July, 2016
File:
PDF, 1.55 MB
english, 2016