Self-Limiting Growth of High-Quality 2D Monolayer MoS...

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ACS Applied Nano Materials 2018 / 12

Self-Limiting Growth of High-Quality 2D Monolayer MoS 2 by Direct Sulfurization Using Precursor-Soluble Substrates for Advanced Field-Effect Transistors and Photodetectors

Lu, Yang, Chen, Tongxin, Ryu, Gyeong Hee, Huang, Hefu, Sheng, Yuewen, Chang, Ren-Jie, Warner, Jamie H.
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Language:
english
Journal:
ACS Applied Nano Materials
DOI:
10.1021/acsanm.8b01955
Date:
December, 2018
File:
PDF, 4.41 MB
english, 2018
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