Ferroelectric HfO2 Tunnel Junction Memory with High TER and...

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IEEE Journal of the Electron Devices Society 2018

Ferroelectric HfO2 Tunnel Junction Memory with High TER and Multi-level Operation Featuring Metal Replacement Process

Kobayashi, Masaharu, Tagawa, Yusaku, Mo, Fei, Saraya, Takuya, Hiramoto, Toshiro
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Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2885932
File:
PDF, 2.50 MB
english, 2018
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