Silicon Oxycarbide-Derived Carbon as Potential NO...

IEEE Electron Device Letters 2018 / 11 Vol. 39; Iss. 11

Silicon Oxycarbide-Derived Carbon as Potential NO 2 Gas Sensor: A First Principles’ Study

Liao, Ningbo, Zhou, Hongming, Zheng, Beirong, Xue, Wei
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Volume:
39
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2869158
Date:
November, 2018
File:
PDF, 1.30 MB
english, 2018
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