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Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells
Ingenito, Andrea, Nogay, Gizem, Stuckelberger, Josua, Wyss, Philippe, Gnocchi, Luca, Allebe, Christophe, Horzel, Jorg, Despeisse, Matthieu, Haug, Franz-Josef, Loper, Philipp, Ballif, ChristopheYear:
2018
Language:
english
Journal:
IEEE Journal of Photovoltaics
DOI:
10.1109/JPHOTOV.2018.2886234
File:
PDF, 1.18 MB
english, 2018