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Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOx as Gate Dielectric
Li, Sichao, Hu, Qianlan, Wang, Xin, Li, Tiaoyang, Li, Xuefei, Wu, YanqingYear:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2888486
File:
PDF, 976 KB
english, 2018