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Modeling and simulation of dual-material-gate AlGaN/GaN high-electron-mobility transistor using finite difference method
Kandasamy, Sowmya, N.B., BalamuruganJournal:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
DOI:
10.1002/jnm.2546
Date:
January, 2019
File:
PDF, 1.01 MB
2019