Atomic step-flow epitaxy of low defect InGaAs islands on...

Journal of Crystal Growth 2019 / 02 Vol. 507

Atomic step-flow epitaxy of low defect InGaAs islands on Si(1 1 1) by micro-channel selective area MOVPE

Fu, Yufeng, Otake, Nobuyuki, Tachino, Yoshihide, Watanabe, Tohma, Sugiyama, Masakazu
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Volume:
507
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.11.036
Date:
February, 2019
File:
PDF, 994 KB
2019
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