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[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - 40× Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip
Xu, Xiaoxin, Tai, Lu, Gong, Tiancheng, Yin, Jiahao, Huang, Peng, Yu, Jie, Dong, Da Nian, Luo, Qing, Liu, Jing, Yu, Zhaoan, Zhu, Xi, Wu, Xiu Long, Liu, Qi, LV, Hangbing, Liu, MingYear:
2018
DOI:
10.1109/IEDM.2018.8614593
File:
PDF, 1.17 MB
2018