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[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - A Surface Potential- and Physics- Based Compact Model for 2D Polycrystalline-MoS2FET with Resistive Switching Behavior in Neuromorphic Computing
Wang, Lingfei, Wang, Lin, Ang, Kah-Wee, Thean, Aaron Voon-Yew, Liang, GengchiauYear:
2018
DOI:
10.1109/IEDM.2018.8614655
File:
PDF, 2.69 MB
2018