[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - Sub-$10^{-9}\ \Omega-\text{cm}^{2}$ Specific Contact Resistivity on P-type Ge and GeSn: In-situ Ga Doping with Ga Ion Implantation at 300 °C, 25 °C, and −100 °C
Wu, Ying, Chua, Lye-Hing, Wang, Wei, Han, Kaizhen, Zou, Wei, Henry, Todd, Gong, XiaoYear:
2018
DOI:
10.1109/IEDM.2018.8614619
File:
PDF, 1.30 MB
2018