Improved Uniformity and Endurance Through Suppression of Filament Overgrowth in Electrochemical Metallization Memory With AgInSbTe Buffer Layer
Tao, Ye, Li, Xuhong, Xu, Haiyang, Wang, Zhongqiang, Ding, Wentao, Liu, Weizhen, Ma, Jiangang, Liu, YichunVolume:
6
Year:
2018
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2843162
File:
PDF, 8 KB
2018