Investigation of Ta₂O₅ as an Alternative High-k Dielectric...

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IEEE Transactions on Electron Devices 2019

Investigation of Ta₂O₅ as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si

Kumar, Sandeep, Kumar, Himanshu, Vura, Sandeep, Pratiyush, Anamika Singh, Charan, Vanjari Sai, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.
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Year:
2019
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2893288
File:
PDF, 8 KB
2019
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