Two-stage reactive ion etching of AlGaN/GaN high electron...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2019 / 01 Vol. 37; Iss. 1

Two-stage reactive ion etching of AlGaN/GaN high electron mobility transistor type heterostructures

Owczarzak, Sławomir, Stafiniak, Andrzej, Paszkiewicz, Regina
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Volume:
37
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/1.5064778
Date:
January, 2019
File:
PDF, 1.11 MB
2019
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