Electronic properties of defects induced by hydrogen and...

Computational Materials Science 2019 / 04 Vol. 160

Electronic properties of defects induced by hydrogen and helium radiation on Weyl semimetal niobium arsenic

Zhang, Zhao-Jun, Fu, Yan-Long, Cheng, Wei, Zhang, Feng-Shou
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
160
Language:
english
Journal:
Computational Materials Science
DOI:
10.1016/j.commatsci.2018.12.049
Date:
April, 2019
File:
PDF, 1003 KB
english, 2019
Conversion to is in progress
Conversion to is failed