Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool
Tsukui, Masayuki, Iyechika, Yasushi, Nago, Hajime, Takahashi, HideshiVolume:
509
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.12.023
Date:
March, 2019
File:
PDF, 846 KB
english, 2019