Optical and interface characteristics of...

Journal of Crystal Growth 2019 / 02 Vol. 508

Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy

Aiello, Anthony, Pandey, Ayush, Bhattacharya, Aniruddha, Gim, Jiseok, Liu, Xianhe, Laleyan, David A., Hovden, Robert, Mi, Zetian, Bhattacharya, Pallab
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Volume:
508
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.12.025
Date:
February, 2019
File:
PDF, 1.14 MB
english, 2019
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