Ti/4H-SiC Schottky diode breakdown voltage with different thickness of 4H-SiC epitaxial layer
Sedykh, S V, Rybalka, S B, Drakin, A Yu, Demidov, A A, Ponomaryova, N S, Shishkina, O AVolume:
1124
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1124/7/071012
Date:
December, 2018
File:
PDF, 421 KB
english, 2018