Influence of GaN- and Si₃N₄-Passivation Layers on the...

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IEEE Transactions on Electron Devices 2019

Influence of GaN- and Si₃N₄-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

Acurio, Eliana, Crupi, Felice, Ronchi, Nicolo, De Jaeger, Brice, Bakeroot, Benoit, Decoutere, Stefaan, Trojman, Lionel
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Year:
2019
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2888809
File:
PDF, 2.03 MB
english, 2019
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