30-nm Contacted Gate Pitch Back-Gate Carbon Nanotube FETs...

IEEE Transactions on Nanotechnology 2019 Vol. 18

30-nm Contacted Gate Pitch Back-Gate Carbon Nanotube FETs for Sub-3-nm Nodes

Srimani, Tathagata, Hills, Gage, Bishop, Mindy Deanna, Shulaker, Max M.
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Volume:
18
Year:
2019
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/TNANO.2018.2888640
File:
PDF, 2.88 MB
english, 2019
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