Improvement of Endurance Characteristics for Al-Gate...

IEICE Transactions on Electronics 2018 / 5 Vol. E101.C; Iss. 5

Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient

KUDOH, Sohya, OHMI, Shun-ichiro
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Volume:
E101.C
Language:
english
Journal:
IEICE Transactions on Electronics
DOI:
10.1587/transele.e101.c.328
Date:
May, 2018
File:
PDF, 931 KB
english, 2018
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