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Polarized photoluminescence of the of GaInP 2 layers grown on GaAs and Ge substrates by MOVPE technique
Prutskij, T., Pelosi, C., Brito-Orta, R.Volume:
132
Language:
english
Journal:
Journal de Physique IV (Proceedings)
DOI:
10.1051/jp4:2006132056
Date:
March, 2006
File:
PDF, 707 KB
english, 2006