[IEEE 2018 IEEE International Meeting for Future of...

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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Dependence of Characteristics of Directly-Bonded SiC/Si Junctions on Bonding Temperature

Shimozato, K., Liang, J., Shigekawa, N., Arai, M.
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Year:
2018
Language:
english
DOI:
10.1109/IMFEDK.2018.8581968
File:
PDF, 568 KB
english, 2018
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