Investigation of Gate-Stress Engineering in Negative...

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IEEE Transactions on Electron Devices 2019

Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides

Cheng, Chun-Hu, Fan, Chia-Chi, Liu, Chien, Hsu, Hsiao-Hsuan, Chen, Hsuan-Han, Hsu, Chih-Chieh, Wang, Shih-An, Chang, Chun-Yen
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Year:
2019
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2888836
File:
PDF, 1019 KB
english, 2019
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