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Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators
Rahim, Abdur, Gusev, G.M., Kvon, Z.D., Olshanetsky, E.B., Mikhailov, N.N., Dvoretsky, S.A.Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2018.12.011
Date:
January, 2019
File:
PDF, 1.23 MB
english, 2019