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Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs
Reigosa, Paula Diaz, Iannuzzo, Francesco, Ceccarelli, LorenzoVolume:
88-90
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.07.144
Date:
September, 2018
File:
PDF, 2.88 MB
english, 2018