Graded-GaAs1−xPx bases in heterojunction bipolar transistors with InGaP emitters
Michio Ohkubo, Nariaki Ikeda, Takao NinomiyaVolume:
11
Year:
1996
Language:
english
Pages:
4
DOI:
10.1002/(sici)1098-2760(19960220)11:33.0.co;2-f
File:
PDF, 518 KB
english, 1996