High-quality SiN x...

Journal of Physics D Applied Physics 2019 / 02 Vol. 52; Iss. 8

High-quality SiN x / p -GaN metal-insulator-semiconductor interface with low-density trap states

Ren, Bing, Liao, Meiyong, Sumiya, Masatomo, Su, Jin, Liu, Xinke, Koide, Yasuo, Sang, Liwen
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Volume:
52
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aaf5ba
Date:
February, 2019
File:
PDF, 1.64 MB
english, 2019
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