Data retention investigation in Al:HfO 2...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2019 / 01 Vol. 37; Iss. 1

Data retention investigation in Al:HfO 2 -based resistive random access memory arrays by using high-temperature accelerated tests

Perez, Eduardo, Mahadevaiah, Mamathamba K., Zambelli, Cristian, Olivo, Piero, Wenger, Christian
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Volume:
37
Language:
english
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/1.5054983
Date:
January, 2019
File:
PDF, 1.15 MB
english, 2019
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