Impact of Cell Layout and Device Structure on On-Voltage Reduction of 6.5-kV n-Channel SiC IGBTs
Watanabe, Naoki, Yoshimoto, Hiroyuki, Shima, AkioVolume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.924.637
Date:
June, 2018
File:
PDF, 714 KB
english, 2018