Ultrathin inserted AlGaN/InAlN heterojunction for...

Applied Physics Express 2019 / 01 Vol. 12; Iss. 1

Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes

Li, Lei, Miyachi, Yuta, Miyoshi, Makoto, Egawa, Takashi
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Volume:
12
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/1882-0786/aaf62b
Date:
January, 2019
File:
PDF, 661 KB
english, 2019
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