Features of the Electron Mobility in the n-InSe Layered...

Features of the Electron Mobility in the n-InSe Layered Semiconductor

Abdinov, A. Sh., Babayeva, R. F.
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Volume:
52
Language:
english
Journal:
Semiconductors
DOI:
10.1134/s106378261813002x
Date:
December, 2018
File:
PDF, 395 KB
english, 2018
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