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Threshold Voltage Variations of 3D V-NAND Flash Memory Devices Due to Different Positions and Angles of the Single Grain Boundary
Lee, Jun Gyu, Yoo, Keon-Ho, Kim, Tae WhanVolume:
17
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2017.14721
Date:
October, 2017
File:
PDF, 864 KB
english, 2017