Fundamental Limit to Scaling Si Field-Effect Transistors...

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IEEE Transactions on Electron Devices 2019

Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling

Markov, Stanislav, Kwok, Yanho, Li, Jun, Zhou, Weijun, Zhou, Yi, Chen, Guanhua
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Year:
2019
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2894967
File:
PDF, 8 KB
2019
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