Improved thermoelectric property of B-doped Si/Ge...

Japanese Journal of Applied Physics 2018 / 01 Vol. 57; Iss. 1S

Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering

Peng, Ying, Miao, Lei, Li, Chao, Huang, Rong, Urushihara, Daisuke, Asaka, Toru, Nakatsuka, Osamu, Tanemura, Sakae
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.01AF03
Date:
January, 2018
File:
PDF, 1.54 MB
english, 2018
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