Low-temperature activation of boron ion in silicon...

Japanese Journal of Applied Physics 2018 / 11 Vol. 57; Iss. 11

Low-temperature activation of boron ion in silicon substrate using B 10 H 14+ cluster and by soft X-ray irradiation

Heya, Akira, Matsuo, Naoto, Kanda, Kazuhiro
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.116502
Date:
November, 2018
File:
PDF, 1.01 MB
english, 2018
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