Study of deep traps in AlGaN/GaN high-electron mobility...

Journal of Applied Physics 2019 / 01 Vol. 125; Iss. 3

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

Ferrandis, Philippe, El-Khatib, Mariam, Jaud, Marie-Anne, Morvan, Erwan, Charles, Matthew, Guillot, Gérard, Bremond, Georges
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Volume:
125
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5055926
Date:
January, 2019
File:
PDF, 1.57 MB
english, 2019
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