Structure and Strain Relaxation of GaN Nanorods Grown on...

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The Journal of Physical Chemistry C 2019 / 01

Structure and Strain Relaxation of GaN Nanorods Grown on Homoepitaxial Surface via Controlling Irregular Mask

Huang, Chang-Hsun, Pakzad, Anahita, Lee, Wei-I, Chou, Yi-Chia
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Language:
english
Journal:
The Journal of Physical Chemistry C
DOI:
10.1021/acs.jpcc.8b10254
Date:
January, 2019
File:
PDF, 1.04 MB
english, 2019
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