Localization and transient emission properties in InGaN/GaN...

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core–shell nanorods

Robin, Y., Evropeitsev, E. A., Shubina, T. V., Kirilenko, D. A., Davydov, V. Yu., Smirnov, A. N., Toropov, A. A., Eliseyev, I. A., Bae, S. Y., Kushimoto, M., Nitta, S., Ivanov, S. V., Amano, H.
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Volume:
11
Year:
2019
Language:
english
Journal:
Nanoscale
DOI:
10.1039/c8nr05863f
File:
PDF, 2.05 MB
english, 2019
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