First AlGaN/GaN metal oxide semiconductor heterostructure...

Electronics Letters 2001 Vol. 37; Iss. 11

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Rotter, T., Mistele, D., Stemmer, J., Seyboth, M., Schwegler, V., Paprotta, S., Fedler, F., Klausing, H., Semchinova, O.K., Aderhold, J., Graul, J.
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Volume:
37
Year:
2001
Journal:
Electronics Letters
DOI:
10.1049/el:20010484
File:
PDF, 6 KB
2001
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